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2SK3403

Toshiba Semiconductor
Part Number 2SK3403
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Oct 23, 2009
Detailed Description 2SK3403 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3403 Switching Regulator Applications · ...
Datasheet PDF File 2SK3403 PDF File

2SK3403
2SK3403

Overview
2SK3403 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3403 Switching Regulator Applications · · · · Low drain-source ON resistance: RDS (ON) = 0.
29 Ω (typ.
) High forward transfer admittance: |Yfs| = 5.
8 S (typ.
) Low leakage current: IDSS = 100 µA (max) (VDSS = 450 V) Enhancement-mode: Vth = 3.
0~5.
0 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kW) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 450 450 ±30 13 52 100 350 13 10 150 -55~150 Unit V V V A W mJ A mJ °C °C Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ― ― 2-10S1B Weight: 1.
5 g (typ.
) Thermal Characteristics www.
DataSheet4U.
com Characteristics Symbol Rth (ch-c) Rth (ch-a) Max 1.
25 83.
3 Unit °C/W °C/W Thermal resistance, channel to case Thermal resistance, channel to ambient Note 1: Please use device on condition that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 3.
46 mH, RG = 25 W, IAR = 13 A Note 3: Repetitive rating; pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device.
Please handle with caution.
JEDEC JEITA TOSHIBA ― ― 2-10S2B Weight: 1.
5 g (typ.
) 1 2002-09-02 2SK3403 Electrical Characteristics (Tc = 25°C) Characteristics Gate leakage current Gate-source breakdown voltage Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) ïYfsï Ciss Crss Coss tr 10 V VGS 0V 10 9 ID = 6 A VDS = 25 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±25 V, VDS = 0 V IG = 10 mA, VDS = 0 V VDS =...


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