( DataSheet : com )
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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The RF MOSFET Line RF Power Field-Effect
Transistor N–Channel Enhancement–Mode
Designed primarily for linear large–signal output stages up to 150 MHz frequency range.
• Specified 50 Volts, 30 MHz Characteristics Output Power = 150 Watts Power Gain = 17 dB (Typ) Efficiency = 45% (Typ) • Superior High Order IMD • IMD(d3) (150 W PEP) — – 32 dB (Typ) • IMD(d11) (150 W PEP) — – 60 dB (Typ) • 100% Tested For Load Mismatch At All Phase Angles With 30:1 VSWR
MRF150
150 W, to 150 MHz N–CHANNEL MOS LINEAR RF POWER FET
D
G S CASE 211–11, STYLE 2
MAXIMUM RATINGS
Rating Drain–Source Voltage ...