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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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The RF MOSFET Line
RF Power Field Effect
Transistor
N–Channel Enhancement–Mode MOSFET
Designed primarily for linear large–signal output stages in the 2.
0–100 MHz frequency range.
• Specified 50 Volts, 30 MHz Characteristics Output Power = 600 Watts Power Gain = 17 dB (Typ) Efficiency = 45% (Typ)
600 W, 50 V, 80 MHz N–CHANNEL BROADBAND RF POWER MOSFET
D
G S
CASE 368–03, STYLE 2 (HOG PAC)
MAXIMUM RATINGS
Rating Drain–Source Voltage Drain–Gate Voltage Gate–Source Voltage Drain Current — Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Ope...