www.
DataSheet4U.
com
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF140/D
The RF MOSFET Line
RF Power Field-Effect
Transistor
N–Channel Enhancement–Mode
Designed primarily for linear large–signal output stages up to 150 MHz frequency range.
• Specified 28 Volts, 30 MHz Characteristics Output Power = 150 Watts Power Gain = 15 dB (Typ) Efficiency = 40% (Typ) • Superior High Order IMD • IMD(d3) (150 W PEP) — –30 dB (Typ) • IMD(d11) (150 W PEP) — –60 dB (Typ) • 100% Tested For Load Mismatch At All Phase Angles With 30:1 VSWR
MRF140
150 W, to 150 MHz N–CHANNEL MOS LINEAR RF POWER FET
D
G S
CASE 211–11, STYLE 2
MAXIMUM RATINGS
Rating Drain–Source Voltage Drain–Gate Voltage Gate–So...