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Freescale Semiconductor Technical Data
Document Number: Order from RF Marketing Rev.
6, 10/2006
RF Power Field - Effect
Transistor
N - Channel Enhancement - Mode Lateral MOSFETs
Designed primarily for wideband large - signal output and driver applications with frequencies up to 450 MHz.
Devices are unmatched and are suitable for use in industrial, medical and scientific applications.
• Typical CW Performance at 220 MHz: VDD = 50 Volts, IDQ = 450 mA, Pout = 150 Watts Power Gain — 25.
5 dB Drain Efficiency — 69% • Capable of Handling 10:1 VSWR, @ 50 Vdc, 210 MHz, 150 Watts Output Power • Integrated ESD Protection • Excellent Thermal Stability • Facilitates Manual Gain Co...