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MRF6V2150NB

Part Number	MRF6V2150NB
Manufacturer	Motorola Semiconductor
Description	RF Power Field Effect Transistor
Published	Nov 14, 2006
Detailed Description	www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: Order from RF Marketing Rev. 6, 10/2006 R...
Datasheet	MRF6V2150NB PDF File

Overview

www.
DataSheet4U.
com Freescale Semiconductor Technical Data Document Number: Order from RF Marketing Rev.
6, 10/2006 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for wideband large - signal output and driver applications with frequencies up to 450 MHz.
Devices are unmatched and are suitable for use in industrial, medical and scientific applications.
• Typical CW Performance at 220 MHz: VDD = 50 Volts, IDQ = 450 mA, Pout = 150 Watts Power Gain — 25.
5 dB Drain Efficiency — 69% • Capable of Handling 10:1 VSWR, @ 50 Vdc, 210 MHz, 150 Watts Output Power • Integrated ESD Protection • Excellent Thermal Stability • Facilitates Manual Gain Co...

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