www.
DataSheet4U.
com
2SK3473
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type (π-MOSIV)
2SK3473
Switching
Regulator Applications
Unit: mm
• • • •
Low drain-source ON resistance: RDS (ON) = 1.
3Ω (typ.
) High forward transfer admittance: |Yfs| = 6.
5S (typ.
) Low leakage current: IDSS = 100 μA (VDS = 720 V) Enhancement-mode: Vth = 2.
0~4.
0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 900 900 ±30 9 27 150 413 9 15 150 -55~150 A W mJ A mJ °C °C Unit V V V
Pulse (t = 1 ms) (Note 1)
Drain power dissipati...