2N3055(
NPN), MJ2955(
PNP)
Preferred Device
Complementary Silicon Power
Transistors
Complementary silicon power
transistors are designed for general−purpose switching and amplifier applications.
Features
• DC Current Gain − hFE = 20−70 @ IC = 4 Adc • Collector−Emitter Saturation Voltage −
VCE(sat) = 1.
1 Vdc (Max) @ IC = 4 Adc
• Excellent Safe Operating Area • Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current − Continuous Base Current Total Power Dissipation @ TC = 25°C Derate Above 25°C
VCEO VCER VCB VEB
IC IB PD
60 70 100 7 15 7 115 0.
657
Vdc Vdc Vd...