Part Number
|
FDMC8878 |
Manufacturer
|
Fairchild Semiconductor |
Description
|
N-Channel Power Trench MOSFET |
Published
|
May 3, 2007 |
Detailed Description
|
FDMC8878 N-Channel Power Trench® MOSFET
February 2007
FDMC8878 N-Channel Power Trench® MOSFET
30V, 16.5A, 14mΩ Feature...
|
Datasheet
|
FDMC8878
|
Overview
FDMC8878 N-Channel Power Trench® MOSFET
February 2007
FDMC8878 N-Channel Power Trench® MOSFET
30V, 16.
5A, 14mΩ Features General Description
Max rDS(on) = 14mΩ at VGS = 10V, ID = 9.
6A Max rDS(on) = 17mΩ at VGS = 4.
5V, ID = 8.
7A Low Profile - 1mm max in Power 33 RoHS Compliant
tm
This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process.
It has been optimized for power management applications.
Application
DC - DC Conversion
Bottom
Top
5
6
7
8 D 1 D
D
D
D D
5 6 7 8
4 G 3 S 2 S 1 S
com
D
S S S G
4
3
2
D
Power 33
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol VDS VGS ID Parameter Drai...
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