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FDMC8878

Fairchild Semiconductor
Part Number FDMC8878
Manufacturer Fairchild Semiconductor
Description N-Channel Power Trench MOSFET
Published May 3, 2007
Detailed Description FDMC8878 N-Channel Power Trench® MOSFET February 2007 FDMC8878 N-Channel Power Trench® MOSFET 30V, 16.5A, 14mΩ Feature...
Datasheet PDF File FDMC8878 PDF File

FDMC8878
FDMC8878

Overview
FDMC8878 N-Channel Power Trench® MOSFET February 2007 FDMC8878 N-Channel Power Trench® MOSFET 30V, 16.
5A, 14mΩ Features General Description „ Max rDS(on) = 14mΩ at VGS = 10V, ID = 9.
6A „ Max rDS(on) = 17mΩ at VGS = 4.
5V, ID = 8.
7A „ Low Profile - 1mm max in Power 33 „ RoHS Compliant tm This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process.
It has been optimized for power management applications.
Application „ DC - DC Conversion Bottom Top 5 6 7 8 D 1 D D D D D 5 6 7 8 4 G 3 S 2 S 1 S www.
DataSheet4U.
com D S S S G 4 3 2 D Power 33 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed PD TJ, TSTG Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range TC = 25°C TA = 25°C (Note 1a) TC = 25°C TC = 25°C TA = 25°C (Note 1a) Ratings 30 ±20 16.
5 38 9.
6 60 31 2.
1 -55 to +150 W °C A Units V V Thermal Characteristics RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 4 60 °C/W Package Marking and Ordering Information Device Marking FDMC8878 Device FDMC8878 Package Power 33 Reel Size 7” Tape Width 8mm Quantity 3000 units ©2007 Fairchild Semiconductor Corporation FDMC8878 Rev.
D 1 www.
fairchildsemi.
com FDMC8878 N-Channel Power Trench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250µA, VGS = 0V ID = 250µA, referenced to 25°C VDS = 24V, VGS = 0V TJ = 125°C VGS = ±20V, VDS = 0V 30 20 1 100 ±100 V mV/°C µA nA On Characteristics VGS(th) ∆VGS(th) ∆TJ rDS(on) gFS Gate to Source Threshold Voltage Gate t...


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