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FDMC8884

Fairchild
Part Number FDMC8884
Manufacturer Fairchild
Description N-Channel Power Trench MOSFET
Published Mar 8, 2014
Detailed Description FDMC8884 N-Channel Power Trench® MOSFET April 2012 FDMC8884 N-Channel Power Trench® MOSFET 30 V, 15 A, 19 mΩ Features ...
Datasheet PDF File FDMC8884 PDF File

FDMC8884
FDMC8884

Overview
FDMC8884 N-Channel Power Trench® MOSFET April 2012 FDMC8884 N-Channel Power Trench® MOSFET 30 V, 15 A, 19 mΩ Features „ Max rDS(on) = 19 mΩ at VGS = 10 V, ID = 9.
0 A „ Max rDS(on) = 30 mΩ at VGS = 4.
5 V, ID = 7.
2 A „ High performance technology for extremely low rDS(on) „ Termination is Lead-free and RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance.
This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
Application „ High side in DC - DC Buck Converters „ Notebook battery power management „ Load switch in Notebook Top Pin 1 S S S G Bottom D D D D D 5 6 7 8 4 3 2 1 G S S S D D D MLP 3.
3x3.
3 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) ID -Continuous (Silicon limited) -Continuous -Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy Power Dissipation Power Dissipation TC = 25 °C TA = 25 °C (Note 1a) (Note 3) TC = 25 °C TC = 25 °C TA = 25 °C (Note 1a) Ratings 30 ±20 15 24 9.
0 40 24 18 2.
3 -55 to +150 mJ W °C A Units V V Operating and Storage Junction Temperature Range Thermal Characteristics RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 6.
6 53 °C/W Package Marking and Ordering Information Device Marking FDMC8884 Device FDMC8884 Package MLP 3.
3x3.
3 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units ©2012 Fairchild Semiconductor Corporation FDMC8884 Rev.
E3 1 www.
fairchildsemi.
com Free Datasheet http://www.
datasheetlist.
com/ FDMC8884 N-Channel Power Trench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ΔBVDSS ΔTJ IDSS IGSS Drain to Source Bre...


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