PD - 91685
IRG4PSH71U
INSULATED GATE BIPOLAR
TRANSISTOR
Features
• UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency (minimum switching and conduction losses) than prior generations • Industry-benchmark Super-247 package with higher power handling capability compared to same footprint TO-247 • Creepage distance increased to 5.
35mm
C
UltraFast Speed IGBT
VCES = 1200V
G E
VCE(on) typ.
= 2.
50V
@VGE = 15V, IC = 50A
n-channel
Benefits
• Generation 4 IGBT's offer highest efficiencies available • Maximum power density, twice ...