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IRG4PSH71U

International Rectifier
Part Number IRG4PSH71U
Manufacturer International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR
Published May 30, 2007
Detailed Description PD - 91685 IRG4PSH71U INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast switching speed optimized for operating fr...
Datasheet PDF File IRG4PSH71U PDF File

IRG4PSH71U
IRG4PSH71U

Overview
PD - 91685 IRG4PSH71U INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency (minimum switching and conduction losses) than prior generations • Industry-benchmark Super-247 package with higher power handling capability compared to same footprint TO-247 • Creepage distance increased to 5.
35mm C UltraFast Speed IGBT VCES = 1200V G E VCE(on) typ.
= 2.
50V @VGE = 15V, IC = 50A n-channel Benefits • Generation 4 IGBT's offer highest efficiencies available • Maximum power density, twice the power handling of the TO-247, less space than TO-264 • IGBTs optimized for specific application conditions • Cost and space saving in designs that require multiple, paralleled IGBTs SUPER - 247 Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current Clamped Inductive Load current Max.
1200 99 50 200 200 ±20 150 350 140 -55 to +150 300 (0.
063 in.
(1.
6mm) from case) Units V A Ù Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy d Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Storage Temperature Range, for 10 sec.
g V mJ W °C Thermal / Mechanical Characteristics Parameter RθJC RθCS RθJA Wt Junction-to-Case- IGBT Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Recommended Clip Force Weight Min.
––– ––– ––– 20 (2.
0) ––– Typ.
––– 0.
24 ––– 6 (0.
21) Max.
0.
36 ––– 38 ––– Units °C/W N (kgf) g (oz.
) www.
irf.
com 1 5/24/04 IRG4PSH71U Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Collector-to-Emitter Breakdown Voltage V(BR)CES 1200 — — V VGE = 0V, IC = 250µA V(BR)ECS Em...


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