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IRG4PSH71K

International Rectifier
Part Number IRG4PSH71K
Manufacturer International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR
Published May 30, 2007
Detailed Description PD - 91687A PRELIMINARY IRG4PSH71K Short Circuit Rated UltraFast IGBT C INSULATED GATE BIPOLAR TRANSISTOR Features • ...
Datasheet PDF File IRG4PSH71K PDF File

IRG4PSH71K
IRG4PSH71K

Overview
PD - 91687A PRELIMINARY IRG4PSH71K Short Circuit Rated UltraFast IGBT C INSULATED GATE BIPOLAR TRANSISTOR Features • Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins • High short circuit rating IGBTs, optimized for motorcontrol • Minimum switching losses combined with low conduction losses • Tightest parameter distribution • Creepage distance increased to 5.
35mm VCES = 1200V G E VCE(on) typ.
= 2.
97V @VGE = 15V, IC = 42A n-channel Benefits • Highest current rating IGBT • Maximum power density, twice the power handling of the TO-247, less space than TO-264 SUPER - 247 Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM tSC VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Œ Clamped Inductive Load Current  Short Circuit Withstand Time Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Ž Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max.
1200 78 42 156 156 10 ± 20 170 350 140 -55 to + 150 300 (0.
063 in.
(1.
6mm from case ) Units V A µs V mJ W °C Thermal Resistance\ Mechanical Parameter RθJC RθCS RθJA Junction-to-Case Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Recommended Clip Force Weight Min.
––– ––– ––– 20.
0(2.
0) ––– Typ.
––– 0.
24 ––– ––– 6 (0.
21) Max.
0.
36 ––– 38 ––– ––– Units °C/W N (kgf) g (oz) www.
irf.
com 1 5/11/99 IRG4PSH71K Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES V(BR)ECS Parameter Min.
Typ.
Collector-to-Emitter Breakdown Voltage 1200 ––– Emitter-to-Collector Breakdown Voltage  18 ––– ∆V(BR)CES/∆TJ Temperature Coeff.
of Breakdown Voltage ––– 1.
1 ––– 2.
97 VCE(ON) Collector-to-Emitter Saturation Voltage ––– 3.
44 ––– 2.
60 VGE(th) Gate Threshold Voltage 3.
0 ––– ∆VGE(th)/∆TJ Temperature C...


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