www.
DataSheet4U.
com N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 – SEPT 93 FEATURES * 200 Volt VDS * RDS(on)=28Ω BS107PT D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS.
PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Current Gate-Source Voltage Power Dissipation at Tamb =25°C Operating and Storage Temperature Range SYMBOL VDS ID IDM VGS Ptot Tj:Tstg VALUE 200 0.
12 2 ±20 500 -55 to +150 UNIT V A A V mW °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) PARAMETER Drain-Source Breakdown Voltage Gate Body Leakage Drain Cut-Off Current Drain Cut-Off Current Static Drain-Source on-State Resistance SYMBOL BVDSS IGSS IDSS IDSX RDS(on) 15 MIN.
200 T...

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