MEDIUM POWER PHEMT • FEATURES ♦ 25 dBm Output Power at 1-dB Compression at 18 GHz ♦ 9.
5 dB Power Gain at 18 GHz ♦ 55% Power-Added Efficiency
DRAIN BOND PAD SOURCE BOND PAD (2x)
LP6836
GATE BOND PAD
•
DESCRIPTION AND APPLICATIONS
DIE SIZE: 14.
2X13.
0 mils (360x330 µm) DIE THICKNESS: 3.
9 mils (100 µm) BONDING PADS: 1.
9X1.
9 mils (50x50 µm)
The LP6836 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility
Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.
25 µ m by 360 µ m
Schottky barrier gate.
The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances.
The epitaxial structure and processing ...