ULTRA LOW NOISE PHEMT • FEATURES ♦ 0.
6 dB Noise Figure at 12 GHz ♦ 12 dB Associated Gain at 12 GHz ♦ Low DC Power Consumption ♦ Excellent Phase Noise
DRAIN BOND PAD (2X) GATE BOND PAD (2X)
LP7512
SOURCE BOND PAD (2x)
DIE SIZE: 18.
0X13.
0 mils (460x330 µm) DIE THICKNESS: 3.
9 mils (100 µm) BONDING PADS: 1.
9X1.
9 mils (50x50 µm)
•
DESCRIPTION AND APPLICATIONS The LP7512 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility
Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.
25 µ m by 200 µ m
Schottky barrier gate.
The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances.
The epitaxial structu...