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LP7512

Filtronic Compound Semiconductors
Part Number LP7512
Manufacturer Filtronic Compound Semiconductors
Description ULTRA LOW NOISE PHEMT
Published Mar 22, 2005
Detailed Description ULTRA LOW NOISE PHEMT • FEATURES ♦ 0.6 dB Noise Figure at 12 GHz ♦ 12 dB Associated Gain at 12 GHz ♦ Low DC Power Consum...
Datasheet PDF File LP7512 PDF File

LP7512
LP7512

Overview
ULTRA LOW NOISE PHEMT • FEATURES ♦ 0.
6 dB Noise Figure at 12 GHz ♦ 12 dB Associated Gain at 12 GHz ♦ Low DC Power Consumption ♦ Excellent Phase Noise DRAIN BOND PAD (2X) GATE BOND PAD (2X) LP7512 SOURCE BOND PAD (2x) DIE SIZE: 18.
0X13.
0 mils (460x330 µm) DIE THICKNESS: 3.
9 mils (100 µm) BONDING PADS: 1.
9X1.
9 mils (50x50 µm) • DESCRIPTION AND APPLICATIONS The LP7512 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.
25 µ m by 200 µ m Schottky barrier gate.
The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances.
The epitaxial structure and processing have been optimized for ultra low noise and usable gain to 40 GHz.
The LP7512 also features Si3 N4 passivation and is available in a variety of packages.
Typical applications include low noise receiver preamplifiers for commercial applications including wireless systems and radio l...


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