1W POWER PHEMT • FEATURES ♦ 31.
5 dBm Output Power at 1-dB Compression at 18 GHz ♦ 8 dB Power Gain at 18 GHz ♦ 28 dBm Output Power at 1-dB Compression at 3.
3V ♦ 45dBm Output IP3 at 18GHz ♦ 50% Power-Added Efficiency
DRAIN BOND PAD (2X) SOURCE BOND PAD (2x) GATE BOND PAD (2X)
LP1500
•
DESCRIPTION AND APPLICATIONS
DIE SIZE: 16.
5X16.
1 mils (420x410 µm) DIE THICKNESS: 3 mils (75 µm) BONDING PADS: 1.
9X2.
4 mils (50x60 µm)
The LP1500 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility
Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.
25 µ m by 1500 µ m
Schottky barrier gate.
The recessed “mushroom” gate structure minimizes pa...