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LP1500SOT89

Filtronic Compound Semiconductors
Part Number LP1500SOT89
Manufacturer Filtronic Compound Semiconductors
Description LOW NOISE/ HIGH LINEARITY PACKAGED PHEMT
Published Mar 22, 2005
Detailed Description LP1500SOT89 LOW NOISE, HIGH LINEARITY PACKAGED PHEMT • FEATURES ♦ 27.5 dBm Output Power at 1-dB Compression at 1.8 GHz ♦...
Datasheet PDF File LP1500SOT89 PDF File

LP1500SOT89
LP1500SOT89

Overview
LP1500SOT89 LOW NOISE, HIGH LINEARITY PACKAGED PHEMT • FEATURES ♦ 27.
5 dBm Output Power at 1-dB Compression at 1.
8 GHz ♦ 17 dB Power Gain at 1.
8 GHz ♦ 1.
0 dB Noise Figure ♦ 44 dBm Output IP3 at 1.
8 GHz ♦ 50% Power-Added Efficiency • DESCRIPTION AND APPLICATIONS The LP1500SOT89 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT).
It utilizes a 0.
25 µm x 1500 µm Schottky barrier gate, defined by electron-beam photolithography.
The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistance.
The epitaxial structure and processing have been optimized for reliable high-power applicat...


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