Part Number
|
IRF620 |
Manufacturer
|
TRANSYS Electronics |
Description
|
Power MOSFET |
Published
|
Mar 5, 2008 |
Detailed Description
|
com
IRF620
Power MOSFET VDSS = 200V, RDS(on) = 0.80 ohm, ID = 5.2 A
D
G S
N Channel
Symbol
ELECTRIC...
|
Datasheet
|
IRF620
|
Overview
com
IRF620
Power MOSFET VDSS = 200V, RDS(on) = 0.
80 ohm, ID = 5.
2 A
D
G S
N Channel
Symbol
ELECTRICAL CHARACTERISICS at
Tj = 25 C Maximum.
Unless stated Otherwise Symbol
Parameter
Drain to Source Breakdown Voltage Drain to Source Leakage Current Gate to Source Leakage Current Gate Threshold Voltage
Test Conditions
VDS = 200VDC, VGS = 0VDC VDS = 160VDC, VGS = 0VDC Tj=125 C VGS = +20VDC VGS = -20VDC VDS = VGS, ID = 250µA
Value Min 200 Typ Max Unit Volt µA nA nA Volt
V(BR)DSS VGS = 0 VDC, ID = 250µA IDSS IGSS VGS(th)
2.
0
260 100 30 7.
2 19 22 13
25 250 100 -100 4.
0 0.
80 14 3.
0 7.
9
Static Drain to Source On - Resistance RDS(on) VGS= 10VDC, ID = 3.
1A Gate Charge Gate ...
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