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Part Number
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APT35GP120J |
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Manufacturer
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Advanced Power Technology |
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Description
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POWER MOS 7 IGBT |
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Published
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May 7, 2008 |
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Detailed Description
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APT35GP120J
1200V
POWER MOS 7 IGBT
G
The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch...
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Datasheet
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APT35GP120J
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Overview
APT35GP120J
1200V
POWER MOS 7 IGBT
G
The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs.
Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies.
ISOTOP ®
®
E C
E
SO
2 T-
27
"UL Recognized"
• Low Conduction Loss • Low Gate Charge • Ultrafast Tail Current shutoff www.
DataSheet4U.
com
MAXIMUM RATINGS
Symbol VCES VGE VGEM I C1 I C2 I CM RBSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Gate-Emitter Voltage Transient
• 50 kHz operation @ 800V, 14A • 20 kHz operation @ 800V, 25A • RBSOA rated
G E C
All Ratings: TC = 25°C...
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