DatasheetsPDF.com

APT35GP120J

Advanced Power Technology
Part Number APT35GP120J
Manufacturer Advanced Power Technology
Description POWER MOS 7 IGBT
Published May 7, 2008
Detailed Description APT35GP120J 1200V POWER MOS 7 IGBT G The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch...
Datasheet PDF File APT35GP120J PDF File

APT35GP120J
APT35GP120J

Overview
APT35GP120J 1200V POWER MOS 7 IGBT G The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs.
Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies.
ISOTOP ® ® E C E SO 2 T- 27 "UL Recognized" • Low Conduction Loss • Low Gate Charge • Ultrafast Tail Current shutoff www.
DataSheet4U.
com MAXIMUM RATINGS Symbol VCES VGE VGEM I C1 I C2 I CM RBSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Gate-Emitter Voltage Transient • 50 kHz operation @ 800V, 14A • 20 kHz operation @ 800V, 25A • RBSOA rated G E C All Ratings: TC = 25°C unless otherwise specified.
APT35GP120J UNIT 1200 ±20 ±30 64 29 140 140A @ 960V 284 -55 to 150 300 Watts °C Amps Volts Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 110°C Pulsed Collector Current 1 @ TC = 25°C Reverse Bias Safe Operating Area @ TJ = 150°C Total Po...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)