Part Number
|
H5N2503P |
Manufacturer
|
Renesas Technology |
Description
|
Silicon N Channel MOS FET High Speed Power Switching |
Published
|
Nov 20, 2008 |
Detailed Description
|
H5N2503P
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1105-0200 (Previous: ADE-208-1374A) Rev.2.00 Sep 07,...
|
Datasheet
|
H5N2503P
|
Overview
H5N2503P
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1105-0200 (Previous: ADE-208-1374A) Rev.
2.
00 Sep 07, 2005
Features
www.
DataSheet4U.
com • Low
• Low on-resistance: R DS (on) = 0.
04 Ω typ.
leakage current: IDSS = 1 µA max (at VDS = 250 V) • High speed switching: tf = 190 ns typ (at VGS = 10 V, VDD = 125 V, ID = 25 A) • Low gate charge: Qg = 140 nC typ (at VDD = 200 V, VGS = 10 V, ID = 50 A) • Avalanche ratings
Outline
RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P)
D
G
1.
Gate 2.
Drain (Flange) 3.
Source
1
2
3
S
Rev.
2.
00 Sep 07, 2005 page 1 of 6
H5N2503P
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain curren...
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