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H5N2503P

Renesas Technology
Part Number H5N2503P
Manufacturer Renesas Technology
Description Silicon N Channel MOS FET High Speed Power Switching
Published Nov 20, 2008
Detailed Description H5N2503P Silicon N Channel MOS FET High Speed Power Switching REJ03G1105-0200 (Previous: ADE-208-1374A) Rev.2.00 Sep 07,...
Datasheet PDF File H5N2503P PDF File

H5N2503P
H5N2503P

Overview
H5N2503P Silicon N Channel MOS FET High Speed Power Switching REJ03G1105-0200 (Previous: ADE-208-1374A) Rev.
2.
00 Sep 07, 2005 Features www.
DataSheet4U.
com • Low • Low on-resistance: R DS (on) = 0.
04 Ω typ.
leakage current: IDSS = 1 µA max (at VDS = 250 V) • High speed switching: tf = 190 ns typ (at VGS = 10 V, VDD = 125 V, ID = 25 A) • Low gate charge: Qg = 140 nC typ (at VDD = 200 V, VGS = 10 V, ID = 50 A) • Avalanche ratings Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D G 1.
Gate 2.
Drain (Flange) 3.
Source 1 2 3 S Rev.
2.
00 Sep 07, 2005 page 1 of 6 H5N2503P Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case thermal Impedance www.
DataSheet4U.
com Channel temperature Symbol VDSS VGSS ID ID (pulse) IDR Note 1 Value 250 ±30 50 200 50 200 50 150 0.
833 150 –55 to +150 Unit V V A A A A A W °C/W °C °C IDR (pulse) Note 3 IAP Pch θ ch-c Tch Tstg Note 1 Note 2 Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at Tc = 25°C 3.
Tch ≤ 150°C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Body-drain diode reverse recovery charge Note: 4.
Pulse test Symbol V (BR) DSS IGSS IDSS VGS (off) RDS (on) |yfs| Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd VDF trr Qrr Min 250 — — 3.
0 — 25 — — — — — — — — — — — — — Typ — — — — 0.
040 40 5150 620 105 58 210 220 190 140 25 60 1.
0 210 1.
8 Max...


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