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H5N2507P

Renesas Technology
Part Number H5N2507P
Manufacturer Renesas Technology
Description High Speed Power Switching MOSFET
Published Oct 20, 2015
Detailed Description H5N2507P 250V - 50A - MOS FET High Speed Power Switching Features  Low on-resistance RDS(on) = 0.04  typ. (at ID = 25 ...
Datasheet PDF File H5N2507P PDF File

H5N2507P
H5N2507P

Overview
H5N2507P 250V - 50A - MOS FET High Speed Power Switching Features  Low on-resistance RDS(on) = 0.
04  typ.
(at ID = 25 A, VGS= 10 V, Ta = 25°C)  Low leakage current  High speed switching  Low gate charge  Built-in fast recovery diode Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P ) 4 1 2 3 Absolute Maximum Ratings Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Avalanche current Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1.
PW ≤ 10 s, duty cycle ≤ 1% 2.
Value at Tc = 25°C 3.
STch = 25°C, Tch ≤ 150°C G Symbol VDSS VGSS ID ID (pulse) Note1 IDR IAP Note3 Pch Note2 ch-c Tch Tstg Preliminary Datasheet R07DS0877EJ0200 (Previous: RJJ03G0646-0100) Rev.
2.
00 Sep 12, 2012 D 1.
Gate 2.
Drain 3.
Source 4.
Drain S Ratings 250 ±30 50 200 50 35 150 0.
833 150 –55 to +150 (Ta = 25°C) Unit V V A A A A W °C/W °C °C R07DS0877EJ0200 Rev.
2.
00 Sep 12, 2012 Page 1 of 6 H5N2507P Electrical Characteristics Item Drain to Source breakdown voltage Zero Gate voltage Drain current Gate to Source leak current Gate to Source cutoff voltage Static Drain to Source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total Gate charge Gate to Source charge Gate to Drain charge Body-Drain diode forward voltage Body-Drain diode reverse recovery time Body-Drain diode reverse recovery charge Note: 4.
Pulse test Symbol V(BR)DSS IDSS IGSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF trr Qrr Min 250 — — 2.
0 — 20 — — — — — — — — — — — — — Typ — — — — 0.
040 36 5000 640 105 55 200 250 200 145 25 65 1.
0 145 0.
7 Max — 10 0.
1 4.
0 0.
055 — — — — — — — — — — — 1.
5 — — Preliminary Unit V A A V  (Ta = 25°C) Test Conditions ID = 10 mA, VGS = 0 VDS = 250 V, VGS = 0 VGS = ±30 V, VDS = 0 VDS = 10 V, ID...


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