isc Silicon
NPN Power
Transistor
INCHANGE Semiconductor
2SC5099
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
V(BR)CEO= 80V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1907 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio and general purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
120
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
6
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
3
A
60
W
150
℃
Tstg...