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PD 91601A
IRG4BC20FD
INSULATED GATE BIPOLAR
TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, 20 kHz in resonant mode).
• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-220AB package
C
Fast CoPack IGBT
VCES = 600V
G E
VCE(on) typ.
= 1.
66V
@VGE = 15V, IC = 9.
0A
n-cha nn el
Benefits
• Generation -4 IGBTs offer highest efficiencies available • IGBTs optimized for specific application con...