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G4BC20FD

International Rectifier
Part Number G4BC20FD
Manufacturer International Rectifier
Description IRG4BC20FD
Published Apr 16, 2009
Detailed Description www.datasheet4u.com PD 91601A IRG4BC20FD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features...
Datasheet PDF File G4BC20FD PDF File

G4BC20FD
G4BC20FD

Overview
www.
datasheet4u.
com PD 91601A IRG4BC20FD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).
• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-220AB package C Fast CoPack IGBT VCES = 600V G E VCE(on) typ.
= 1.
66V @VGE = 15V, IC = 9.
0A n-cha nn el Benefits • Generation -4 IGBTs offer highest efficiencies available • IGBTs optimized for specific application conditions • HEXFRED diodes optimized for performance with IGBTs.
Minimized recovery characteristics require less/no snubbing • Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs TO-220AB Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C...


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