DatasheetsPDF.com

G4BC20KD

International Rectifier
Part Number G4BC20KD
Manufacturer International Rectifier
Description IRG4BC20KD
Published Jan 13, 2006
Detailed Description www.DataSheet4U.com PD -91599A IRG4BC20KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Feature...
Datasheet PDF File G4BC20KD PDF File

G4BC20KD
G4BC20KD

Overview
www.
DataSheet4U.
com PD -91599A IRG4BC20KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.
0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-220AB package C Short Circuit Rated UltraFast IGBT VCES = 600V G E VCE(on) typ.
= 2.
27V @VGE = 15V, IC = 9.
0A n-ch an nel Benefits • Latest generation 4 IGBTs offer highest power density motor controls possible • HEXFREDTM diodes optimized for performance with IGBTs.
Minimized recovery characteristics reduce noise, EMI and switching losses • This part replaces the IRGBC20KD2 and IRGBC20MD2 products • For hints see design tip 97003 TO-220AB Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM tsc VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
600 16 9.
0 32 32 7.
0 32 10 ± 20 60 24 -55 to +150 300 (0.
063 in.
(1.
6mm) from case) 10 lbf•in (1.
1 N•m) Units V A µs V W °C Thermal Resistance Parameter RθJC RθJC RθCS RθJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min.
––– ––– ––– ––– ––– Typ.
––– ––– 0.
50 ––– 2 (0.
07) Max.
2.
1 3.
5 ––– 80 ––– Units °C/W g (oz) www.
irf.
com 1 4/24/2000 www.
...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)