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G4BC20UD

International Rectifier
Part Number G4BC20UD
Manufacturer International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR
Published Apr 8, 2006
Detailed Description PD 91449B IRG4BC20UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: optimiz...
Datasheet PDF File G4BC20UD PDF File

G4BC20UD
G4BC20UD

Overview
PD 91449B IRG4BC20UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 www.
DataSheet4U.
com kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFRED ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-220AB package C UltraFast CoPack IGBT VCES = 600V G E VCE(on) typ.
= 1.
85V @VGE = 15V, IC = 6.
5A n-cha nn el Benefits • Generation -4 IGBTs offer highest efficiencies available • IGBTs optimized for specific application conditions • HEXFRED diodes optimized for performance with IGBTs.
Minimized recovery characteristics require less/no snubbing • Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs TO-220AB Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 1...


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