SMD Type
MOS Field Effect
Transistor 2SK3404
TO-263
+0.
1 1.
27-0.
1
MOSFET
Unit: mm
+0.
1 1.
27-0.
1 +0.
2 4.
57-0.
2
Features
4.
5-V drive available Low on-state resistance
+0.
2 8.
7-0.
2
RDS(on)1 = 14 m Low gate charge
MAX.
(VGS = 10 V, ID = 20 A)
+0.
1 1.
27-0.
1
0.
1max
+0.
1 0.
81-0.
1
+0.
2 5.
28-0.
2
QG = 25 nC TYP.
(ID = 40 A, VDD = 24 V, VGS = 10 V) Built-in gate protection diode Surface mount device available
2.
54 5.
08
+0.
1 -0.
1
+0.
2 2.
54-0.
2
+0.
2 15.
25-0.
2
+0.
2 2.
54-0.
2
+0.
2 0.
4-0.
2
Absolute Maximum Ratings Ta = 25
Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation TC=25 TA=25 Channel temperature Storage temperature * PW 10 s,Duty Cycle 1% Tch Tstg...