FDFMA2P859T Integrated P-Channel PowerTrench® MOSFET and
Schottky Diode
FDFMA2P859T
–20 V, –3.
0 A, 120 m: Features
MOSFET:
Max rDS(on) = 120 m: at VGS = –4.
5 V, ID = –3.
0 A Max rDS(on) = 160 m: at VGS = –2.
5 V, ID = –2.
5 A Max rDS(on) = 240 m: at VGS = –1.
8 V, ID = –1.
0 A
July 2009
Integrated P-Channel PowerTrench® MOSFET and
Schottky Diode
General Description
This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications.
It features a MOSFET with low on-state resistance and an independently connected low forward voltage
schottky diode for minimum conduction losses.
The MicroFET 2x2 Thin pack...