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FDFMA2P857

Fairchild Semiconductor
Part Number FDFMA2P857
Manufacturer Fairchild Semiconductor
Description Integrated P-Channel PowerTrench MOSFET and Schottky Diode
Published May 3, 2007
Detailed Description FDFMA2P857 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode February 2007 FDFMA2P857 Integrated P-Channel ...
Datasheet PDF File FDFMA2P857 PDF File

FDFMA2P857
FDFMA2P857

Overview
FDFMA2P857 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode February 2007 FDFMA2P857 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode –20V, –3.
0A, 120mΩ Features MOSFET: „ Max rDS(on) = 120mΩ at VGS = –4.
5V, ID = –3.
0A „ Max rDS(on) = 160mΩ at VGS = –2.
5V, ID = –2.
5A „ Max rDS(on) = 240mΩ at VGS = –1.
8V, ID = –1.
0A General Description This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultraportable applications.
It features a MOSFET with low on-state resistance and an independently connected low forward voltage schottky diode for minimum conduction losses.
The MicroFET 2x2 package offers exceptional thermal performance for it’s physical size and is well suited to linear mode applications.
Schottky: „ VF < 0.
54V @ 1A „ Low profile - 0.
8 mm maximum - in the new package MicroFET 2x2 mm „ RoHS Compliant Pin 1 A NC D A 1 www.
DataSheet4U.
com 6 C 5 G 4 S NC 2 D 3 C MicroFET 2x2 G S MOS...


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