2N7002CK
60 V, 0.
3 A N-channel Trench MOSFET
Rev.
01 — 11 September 2009
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Product data sheet
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Product profile
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1 General description
ESD protected N-channel enhancement mode Field-Effect
Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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2 Features
I I I I Logic-level compatible Very fast switching Trench MOSFET technology ESD protection up to 3 kV
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3 Applications
I I I I Relay driver High-speed line driver Low-side loadswitch Switching circuits
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4 Quick reference data
Table 1.
Symbol VDS ID IDM RDSon Quick reference data Parameter drain-source voltage drain current peak drain current drain-...