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2N7002

nexperia
Part Number 2N7002
Manufacturer nexperia
Description 300mA N-channel MOSFET
Published Dec 12, 2019
Detailed Description 2N7002 60 V, 300 mA N-channel Trench MOSFET Rev. 7 — 8 September 2011 Product data sheet 1. Product profile 1.1 Gener...
Datasheet PDF File 2N7002 PDF File

2N7002
2N7002

Overview
2N7002 60 V, 300 mA N-channel Trench MOSFET Rev.
7 — 8 September 2011 Product data sheet 1.
Product profile 1.
1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOSFET technology.
1.
2 Features and benefits  Suitable for logic level gate drive sources  Very fast switching  Surface-mounted package  Trench MOSFET technology 1.
3 Applications  Logic level translators  High-speed line drivers 1.
4 Quick reference data Table 1.
Symbol VDS ID Quick reference data Parameter drain-source voltage drain current Ptot total power dissipation Static characteristics RDSon drain-source on-state resistance Conditions 25 °C ≤ Tj ≤ 150 °C VGS = 10 V; Tsp = 25 °C; see Figure 1; see Figure 3 Tsp = 25 °C; see Figure 2 VGS = 10 V; ID = 500 mA; Tj = 25 °C; see Figure 6; see Figure 8 2.
Pinning information Min Typ Max Unit - - 60 V - - 300 mA - - 0.
83 W - 2.
8 5 Ω Table 2.
Pin 1 2 3 Pinning information Symbol Description G gate S source D drain Simplified outline 3 12 SOT23 (TO-236AB) Graphic symbol D G mbb076 S Nexperia 2N7002 60 V, 300 mA N-channel Trench MOSFET 3.
Ordering information Table 3.
Ordering information Type number Package Name 2N7002 TO-236AB 4.
Marking Description plastic surface-mounted package; 3 leads Table 4.
Marking codes Type number 2N7002 [1] % = placeholder for manufacturing site code 5.
Limiting values Marking code[1] 12% Table 5.
Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions VDS VDGR VGS VGSM ID drain-source voltage drain-gate voltage gate-source voltage peak gate-source voltage drain current 25 °C ≤ Tj ≤ 150 °C 25 °C ≤ Tj ≤ 150 °C; RGS = 20 kΩ pulsed; tp ≤ 50 µs; δ = 0.
25 VGS = 10 V; Tsp = 25 °C; see Figure 1; see Figure 3 IDM peak drain current VGS = 10 V; Tsp = 100 °C; see Figure 1 pulsed; tp ≤ 10 µs; Tsp = 25 °C; see Figure 3 Ptot total power dissipation Tj junction temperature Tstg stor...


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