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2N7002

MCC
Part Number 2N7002
Manufacturer MCC
Description N-Channel MOSFET
Published Jul 23, 2020
Detailed Description Features • Advanced Trench Process Technology • Low Threshold Voltage • Fast Switching Speed • Epoxy Meets UL 94 V-0 Fla...
Datasheet PDF File 2N7002 PDF File

2N7002
2N7002

Overview
Features • Advanced Trench Process Technology • Low Threshold Voltage • Fast Switching Speed • Epoxy Meets UL 94 V-0 Flammability Rating • Moisture Sensitivity Level 1 • Halogen Free.
“Green” Device (Note 1) • Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant.
See Ordering Information) 1 1&KDQQHO 026)(7 Maximum Ratings • Operating Junction Temperature Range: -55°C to +150°C • Storage Temperature: -55°C to +150°C • Thermal Resistance: 115°C/W Junction to Ambient(Note2) Parameter Symbol Rating Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous TA=25°C TA=100°C 0.
34 ID 0.
22 A Pulsed Drain Current IDM 2 A Power Dissipation PD 1.
08 W Note: 1.
Halogen free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
2.
The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz.
Copper, in a still air environment with TA =25°C ,QWHUQDO6WUXFWXUHDQG0DUNLQJ&RGH D G S 1.
GATE 2.
SOURCE 3.
DRAIN 7002.
SOT-23 A D 3 12 F E CB G H J L K DIMENSIONS DIM INCHES MM MIN MAX MIN MAX A 0.
110 0.
120 2.
80 3.
04 B 0.
083 0.
104 2.
10 2.
64 C 0.
047 0.
055 1.
20 1.
40 D 0.
034 0.
041 0.
85 1.
05 E 0.
067 0.
083 1.
70 2.
10 F 0.
018 0.
024 0.
45 0.
60 G 0.
0004 0.
006 0.
01 0.
15 H 0.
035 0.
043 0.
90 1.
10 J 0.
003 0.
007 0.
08 0.
18 K 0.
012 0.
020 0.
30 0.
51 L 0.
007 0.
020 0.
20 0.
50 NOTE 4VHHFTUFE4PMEFS1BE-BZPVU 0.
031 0.
800 0.
035 0.
900 0.
079 2.
000 inches mm 0.
037 0.
950 0.
037 0.
950 Rev.
3-15-08212023 1/5 MCCSEMI.
COM 1 ELECTRICAL CHARACTERISTICS (Ta=25Я unless otherwise specified) Parameter Symbol Test conditions Static Characteristics Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250µA Gate-Threshold Voltage VGS(th) VDS=VGS, ID=250µA Gate-Body Leakage Zero Gate Voltage Drain Current Drain-Source On-Resistance Forward Transconductance IGSS VDS =0V, VGS =±20V IDSS RD...


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