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2N7002

GME
Part Number 2N7002
Manufacturer GME
Description N-Channel Power Mosfet
Published May 18, 2018
Detailed Description Production specification N-Channel Enhancement Mode Field Effect Transistor 2N7002 FEATURES  High Density Cell Desig...
Datasheet PDF File 2N7002 PDF File

2N7002
2N7002

Overview
Production specification N-Channel Enhancement Mode Field Effect Transistor 2N7002 FEATURES  High Density Cell Design For Low Pb RDS(ON).
Lead-free  Voltage Controlled Small Signal Switch.
 Rugged and Reliable.
 High Saturation Current Capability.
 MSL 1 APPLICATIONS  N-channel enhancement mode effect transistor.
 Switching application.
SOT-23 ORDERING INFORMATION Type No.
Marking 2N7002 7002 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VDSS VDGR VGSS ID PD RθJA Drain-Source voltage 60 Drain-Gate voltage(RGS≤1MΩ) 60 Gate -Source voltage - continuous ±20 -Non Repetitive (tp<50μs) ±40 Maximum Drain current -continuous 115 -Pulsed 800 Power Dissipation 200 Thermal resistance,Junction-to-Ambient 625 TJ, Tstg Junction and Storage Temperature -50 to +150 Units V V V mA mW ℃/W ℃ C008 Rev.
A www.
gmesemi.
com 1 Production specification N-Channel Enhancement Mode Field Eff...


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