Part Number
|
HAT2281C |
Manufacturer
|
Renesas Technology |
Description
|
Silicon N-Channel Power MOSFET |
Published
|
Apr 13, 2010 |
Detailed Description
|
www.DataSheet4U.com
HAT2281C
Silicon N Channel MOS FET Power Switching
REJ03G1328-0200 Rev.2.00 Jan 26, 2006
Features
...
|
Datasheet
|
HAT2281C
|
Overview
www.
DataSheet4U.
com
HAT2281C
Silicon N Channel MOS FET Power Switching
REJ03G1328-0200 Rev.
2.
00 Jan 26, 2006
Features
• Low on-resistance RDS(on) = 109 mΩ typ.
(at VGS = 4.
5 V) • Low drive current • High density mounting • 2.
5 V gate drive device
Outline
RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6) Indexband 6 5 4 6 G 2 3 4 5 DD D D
1.
Source 2.
Drain 3.
Drain 4.
Drain 5.
Drain 6.
Gate
1
2
3
S 1
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Drain to Source voltage VDSS Gate to Source voltage VGSS Drain current ID Note1 Drain peak current ID (pulse) Body - Drain diode reverse Drain current IDR Channel dissipation Pch Note2 Channel temperature Tch Storage temperature T...
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