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HAT2282C

Renesas Technology
Part Number HAT2282C
Manufacturer Renesas Technology
Description Silicon N-Channel Power MOSFET
Published Apr 13, 2010
Detailed Description HAT2282C Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 173 mΩ typ.(at VGS = 4.5 V) •...
Datasheet PDF File HAT2282C PDF File

HAT2282C
HAT2282C

Overview
HAT2282C Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 173 mΩ typ.
(at VGS = 4.
5 V) • Low drive current • High density mounting • 2.
5 V gate drive device Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6) Indexband 6 5 4 3 2 1 REJ03G1329-0100 Rev.
1.
00 Jan 26, 2006 23 45 DD DD 6 G S 1 1.
Source 2.
Drain 3.
Drain 4.
Drain 5.
Drain 6.
Gate Absolute Maximum Ratings Item Symbol Drain to Source voltage VDSS Gate to Source voltage VGSS Drain current Drain peak current ID ID Note1 (pulse) Body - Drain diode reverse Drain current Channel dissipation IDR Pch Note2 Channel temperature Tch Storage temperature Tstg Notes: 1.
PW...


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