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HAT2281C

Renesas Technology
Part Number HAT2281C
Manufacturer Renesas Technology
Description Silicon N-Channel Power MOSFET
Published Apr 13, 2010
Detailed Description www.DataSheet4U.com HAT2281C Silicon N Channel MOS FET Power Switching REJ03G1328-0200 Rev.2.00 Jan 26, 2006 Features ...
Datasheet PDF File HAT2281C PDF File

HAT2281C
HAT2281C

Overview
www.
DataSheet4U.
com HAT2281C Silicon N Channel MOS FET Power Switching REJ03G1328-0200 Rev.
2.
00 Jan 26, 2006 Features • Low on-resistance RDS(on) = 109 mΩ typ.
(at VGS = 4.
5 V) • Low drive current • High density mounting • 2.
5 V gate drive device Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6) Indexband 6 5 4 6 G 2 3 4 5 DD D D 1.
Source 2.
Drain 3.
Drain 4.
Drain 5.
Drain 6.
Gate 1 2 3 S 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to Source voltage VDSS Gate to Source voltage VGSS Drain current ID Note1 Drain peak current ID (pulse) Body - Drain diode reverse Drain current IDR Channel dissipation Pch Note2 Channel temperature Tch Storage temperature Tstg Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
When using the glass epoxy board (FR4 40 x 40 x 1.
6mm) Ratings 60 ±12 2 8 2 850 150 –55 to +150 Unit V V A A A mW °C °C Rev.
2.
00 Jan 26, 2006 page 1 of 6 HAT2281C Electrical Characteristics Item Drain to Source breakdown voltage Gate to Source breakdow...


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