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2SK3935
TOSHIBA Field Effect
Transistor Silicon N-Channel MOS Type (π-MOSVI)
2SK3935
Switching
Regulator Applications
z Low drain-source ON resistance: z High forward transfer admittance: z Low leakage current: RDS (ON) = 0.
18 Ω (typ.
) |Yfs| = 10 S (typ.
) Unit: mm
IDSS = 100 μA (max) (VDS = 450 V)
z Enhancement model: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current Drain power dissipation Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range DC (Not...