DatasheetsPDF.com

2SK3904

Toshiba Semiconductor
Part Number 2SK3904
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Jul 7, 2010
Detailed Description www.DataSheet4U.com 2SK3904 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) 2SK3904 Switching Re...
Datasheet PDF File 2SK3904 PDF File

2SK3904
2SK3904


Overview
www.
DataSheet4U.
com 2SK3904 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) 2SK3904 Switching Regulator Applications • • • • Low drain-source ON resistance: RDS (ON) = 0.
2 Ω (typ.
) High forward transfer admittance: ⎪Yfs⎪ = 9.
5 S (typ.
) Low leakage current: IDSS = 100 μA (max) (VDS = 450 V) Enhancement model: Vth = 2.
0~4.
0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 450 450 ±30 19 76 150 820 19 15 150 −55~150 Unit V V V A W mJ A mJ °C °C 1.
GATE 2.
DRAIN (HEATSINK) 3.
SOURCE Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ― SC-65 2−16C1B Weight: 4.
6 g (typ.
) Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics 2 Characteristic Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 0.
833 50 Unit °C/W °C/W Note 1: Ensure that the channel temperature does not exceed 150°C during use of the device.
Note 2: VDD = 90 V, Tch = 25°C, L = 3.
79 mH, RG = 25 Ω, IAR = 19 A Note 3: Repetitive rating: pulse width limited by max junction temperature This transistor is an electrostati...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)