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2SK3900

NEC
Part Number 2SK3900
Manufacturer NEC
Description SWITCHING N-CHANNEL POWER MOSFET
Published Jan 20, 2006
Detailed Description DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3900 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3900 is N-channe...
Datasheet PDF File 2SK3900 PDF File

2SK3900
2SK3900


Overview
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3900 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3900 is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION PART NUMBER 2SK3900-ZP PACKAGE TO-263 (MP-25ZP) FEATURES • Super low on-state resistance RDS(on)1 = 8.
0 mΩ MAX.
(VGS = 10 V, ID = 41 A) RDS(on)2 = 10 mΩ MAX.
(VGS = 4.
5 V, ID = 41 A) • Low C iss: C iss = 3500 pF TYP.
• Built-in gate protection diode (TO-263) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 60 ±20 ±82 ±246 104 1.
5 150 −55 to +150 141 37.
5 141 V V A A W W °C °C mJ A mJ Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Energy Note2 Note3 Note3 EAS IAR EAR Repetitive Avalanche Current Repetitive Avalanche Energy Notes 1.
PW ≤ 10 µs, Duty Cycle ≤ 1% 2.
Starting Tch = 25°C, VDD = 30 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 µH 3.
RG = 25 Ω, Tch(peak) ≤ 150°C The information in this document is subject to change without notice.
Before using this document, please confirm that this is the latest version.
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Document No.
D17175EJ1V0DS00 (1st edition) Date Published May 2004 NS CP(K) Printed in Japan 2004 2SK3900 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Note Note SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 TEST CONDITIONS VDS = 60 V, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 41 A VGS = 10 V, ID = 41 A VGS = 4.
5 V, ID = 41 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 30 V, ID = 41 A VGS = 10 ...


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