com
MTD6N15 Power Field Effect
Transistor DPAK for Surface Mount
N−Channel Enhancement−Mode Silicon Gate
This TMOS Power FET is designed for high speed, low loss power switching applications such as switching
regulators, converters, solenoid and relay drivers.
• Silicon Gate for Fast Switching Speeds • Low RDS(on) — 0.
3 Ω Max • Rugged — SOA is Power Dissipation Limited • Source−to−Drain Diode Characterized for Use With Inductive Loads • Low Drive Requirement — VGS(th) = 4.
0 V Max • Surface Mount Package on 16 mm Tape
MAXIMUM RATINGS
Rating Drain−Source Voltage Drain−Gate Voltage (RGS = 1.
0 MΩ) Gate−Source Voltage — Continuous Gate−Source Voltage — Non−Repetitive (tp ≤ 50 µs)...