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MTD6N15

Part Number	MTD6N15
Manufacturer	ON Semiconductor
Description	Power Field Effect Transistor
Published	Aug 17, 2010
Detailed Description	www.DataSheet4U.com MTD6N15 Power Field Effect Transistor DPAK for Surface Mount N−Channel Enhancement−Mode Silicon Gat...
Datasheet	MTD6N15 PDF File

Overview

www.
DataSheet4U.
com MTD6N15 Power Field Effect Transistor DPAK for Surface Mount N−Channel Enhancement−Mode Silicon Gate This TMOS Power FET is designed for high speed, low loss power switching applications such as switching regulators, converters, solenoid and relay drivers.
• Silicon Gate for Fast Switching Speeds • Low RDS(on) — 0.
3 Ω Max • Rugged — SOA is Power Dissipation Limited • Source−to−Drain Diode Characterized for Use With Inductive Loads • Low Drive Requirement — VGS(th) = 4.
0 V Max • Surface Mount Package on 16 mm Tape MAXIMUM RATINGS Rating Drain−Source Voltage Drain−Gate Voltage (RGS = 1.
0 MΩ) Gate−Source Voltage — Continuous Gate−Source Voltage — Non−Repetitive (tp ≤ 50 µs)...

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