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MTD6N15

Part Number	MTD6N15
Manufacturer	Motorola
Description	Power MOSFET
Published	Aug 17, 2010
Detailed Description	MOTOROLA SEMICONDUCTOR TECHNICAL DATA www.DataSheet4U.com Order this document by MTD6N15/D Designer's Power Field E...
Datasheet	MTD6N15 PDF File

Overview

MOTOROLA SEMICONDUCTOR TECHNICAL DATA www.
DataSheet4U.
com Order this document by MTD6N15/D Designer's Power Field Effect Transistor DPAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate This TMOS Power FET is designed for high speed, low loss power switching applications such as switching regulators, converters, solenoid and relay drivers.
Silicon Gate for Fast Switching Speeds Low RDS(on) — 0.
3 Ω Max Rugged — SOA is Power Dissipation Limited Source–to–Drain Diode Characterized for Use With Inductive Loads • Low Drive Requirement — VGS(th) = 4.
0 V Max • Surface Mount Package on 16 mm Tape • • • • ™ Data Sheet MTD6N15 TMOS POWER FET 6.
0 AMPERES 150 VOLTS RDS(on) = 0.
3 OHM ® ...

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