3N165 P-CHANNEL MOSFET The 3N165 is a monolithic dual enhancement mode P-Channel Mosfet FEATURES  DIRECT REPLACEMENT FOR INTERSIL 3N165  ABSOLUTE MAXIMUM RATINGS1@ 25°C (unless otherwise noted)  Maximum Temperatures  The hermetically sealed TO-78 package is well suited Storage Temperature  ‐65°C to +200°C  for high reliability and harsh environment applications.
Operating Junction Temperature  ‐55°C to +150°C  Lead Temperature (Soldering, 10 sec.
)  +300°C  (See Packaging Information).
Maximum Power Dissipation  Continuous Power Dissipation (one side)  300mW  3N165 Features: Total Derating above 25°C 4.
2 mW/°C  MAXIMUM CURRENT ƒ Very high Input Impedance Drain Current  50mA  ƒ Low Capacitanc...

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