3N191 P-CHANNEL MOSFET The 3N191 is a monolithic dual enhancement mode P-Channel Mosfet FEATURES  DIRECT REPLACEMENT FOR INTERSIL 3N191  LOW GATE LEAKAGE CURRENT  IGSS ≤ ± 10pA  LOW TRANSFER CAPACITANCE  Crss ≤ 1.
0pF  The hermetically sealed TO-78 package is well suited ABSOLUTE MAXIMUM RATINGS1@ 25°C (unless otherwise noted)  for high reliability and harsh environment applications.
Maximum Temperatures  Storage Temperature  ‐65°C to +150°C  (See Packaging Information).
Operating Junction Temperature  ‐55°C to +135°C  Maximum Power Dissipation  Continuous Power Dissipation (one side)  300mW  3N191 Features: Continuous Power Dissipation (one side) 525mW  MAXIMUM CURRENT ƒ Very high Input Imp...

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