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2SA1788

Power Transistor

Description

isc Silicon PNP Power Transistor 2SA1788 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -120V(Min) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT ...

Inchange Semiconductor

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